鈥?/div>
Collector-Emitter Voltage : V
CEO
=120V
Current Gain Bandwidth Productor : f
T
=120MHz
Collector Dissipation : P
C
=1~2W in Mounted on Ceramic Board
Complement to KSA1201
1
SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Value
120
120
5
800
160
500
1,000
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
mW
擄C
擄C
Storage Temperature
T
STG
* Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10碌A(chǔ), I
B
=0
I
E
=1mA, I
C
=0
V
CB
=120V, I
E
=0
V
BE
=5V, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
120
30
80
Min.
120
5
100
100
240
1.0
1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
C
ob
h
FE
Classification
Classification
h
FE
O
80 ~ 160
Marking
Y
120 ~ 240
SCX
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1
2
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