KSC2859
KSC2859
Low Frequency Power Amplifier
鈥?Complement to KSA1182
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
35
30
5
500
150
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
I
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Test Condition
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=400mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=20mA
V
CB
=6V, I
E
=0, f=1MHz
70
25
0.1
0.8
300
7
Min.
Typ.
Max.
0.1
0.1
240
0.25
1.0
V
V
MHz
pF
Units
碌A(chǔ)
碌A(chǔ)
h
FE1
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
Marking
E1O
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002