KSC2334
KSC2334
High Speed Switching Industrial Use
鈥?Complement to KSA1010
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
A
=25擄C)
Junction Temperature
Storage Temperature
Parameter
1
TO-220
2.Collector
Value
150
100
7
7
15
3.5
40
1.5
150
- 55 ~ 150
3.Emitter
Units
V
V
V
A
A
A
W
W
擄C
擄C
1.Base
* PW鈮?00碌s, Duty Cycle鈮?0%
Electrical Characteristics
TC=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Test Condition
I
C
= 5A, I
B1
= 0.5A, L = 1mH
I
C
= 5A, I
B1
= -I
B2
= 0.5A
V
BE
(off) = -5V, L = 180碌H, Clamped
I
C
= 10A, I
B1
=1A, I
B2
= -0.5A,
V
BE
(off) = -5V, L = 180碌H, Clamped
V
CB
= 100, I
E
= 0
V
CE
= 100V, R
BE
= 51鈩T
C
=125擄C
V
CE
= 100V, V
BE
(off) = -1.5V
V
CE
= 100V, V
BE
(off) = -1.5V
@ T
C
= 125擄C
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.5A
V
CC
= 50V, I
C
= 5A
I
B1
= -I
B2
= 0.5A
R
L
= 10鈩?/div>
40
40
20
Min.
100
100
100
10
1
10
1
10
240
0.6
1.5
0.5
0.5
1.5
V
V
碌s
碌s
碌s
Max.
Units
V
V
V
碌A(chǔ)
mA
碌A(chǔ)
mA
碌A(chǔ)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?%Pulsed
h
FE
Classification
Classification
h
FE2
漏2001 Fairchild Semiconductor Corporation
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
Rev. A1, August 2001
1
2
3
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