KSC2258/2258A
KSC2258/2258A
High Voltage General Amplifier
TV Video Output Amplifier
鈥?High BV
CEO
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSC2258
: KSC2258A
V
CEO
Collector-Emitter Voltage
: KSC2258
: KSC2258A
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
250
300
6
100
150
4
150
- 55 ~ 150
V
V
V
mA
mA
W
擄C
擄C
250
300
V
V
Parameter
Value
Units
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
EBO
I
CER
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
E
= 0.1mA, I
C
= 0
V
CE
= 250V, R
BE
= 100K鈩?/div>
V
CE
= 20V, I
C
= 40mA
V
CE
= 50V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= -20V, I
C
= 40mA
V
CE
= 10V, I
C
= 10mA
V
CB
= 50V, f = 1MHz
100
3
4.5
40
30
1.2
1.2
V
V
MHz
pF
Min.
6
Typ.
Max.
100
Units
V
碌A(chǔ)
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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