鈥?/div>
Collector-Base Voltage : V
CEO
=30V
High Current Gain Bandwidth Product : f
T
=300MHz (TYP.)
Low Collector Capacitance : C
OB
=2.0pF (TYP.)
Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
TJ
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
30
5
50
250
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10碌A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0, f=1MHz
150
40
0.67
0.08
300
2.0
2.5
Min.
50
30
5
0.1
0.1
240
0.75
0.3
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
碌A
碌A
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1
2
3
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