KSC1187
KSC1187
TV 1st, 2nd Picture IF Amplifier
(Forward AGC)
鈥?High Current Gain Bandwidth Product : f
T
=700MHz
鈥?High Power Gain : G
PE
=24dB (TYP.) at f=45MHz
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
30
20
4
30
250
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
f
T
C
RE
G
PE
V
AGC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Voltage
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=5mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=2mA
V
CE
=10V, I
C
=3mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
C
=3mA
f=45MHz
G
R
= 30dB, f=45MHz
20
4.4
40
400
700
0.6
24
5.2
6.0
Min.
30
25
4
0.1
240
MHz
pF
dB
V
Typ.
Max.
Units
V
V
V
碌A(chǔ)
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001