KSC1173
KSC1173
Low Frequency Power Amplifier
Power Regulator
鈥?Collector Current : I
C
=3A
鈥?Collector Dissipation : P
C
=10W (T
C
=25擄C)
鈥?Complement to KSA473
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
30
30
5
3
10
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Base Width Product
Output Capacitance
Test Condition
I
C
= 500碌A, I
E
= 0
I
C
= 10mA I
B
= 0
I
E
= -1mA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.5A
I
C
= 2A, I
B
= 0.2A
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 0.5A
V
CB
= 10V, I
E
=0,
f = 1MHz
70
25
0.3
0.75
100
35
Min.
30
30
5
1.0
1.0
240
0.8
1.0
V
V
MHz
pF
碌A
碌A
Typ.
Max.
Units
V
V
h
FE
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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2
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