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KSC1008COBU Datasheet

  • KSC1008COBU

  • NPN Epitacial Silicon Transistor

  • 161.45KB

  • 5頁(yè)

  • FAIRCHILD

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KSC1008 NPN Epitacial Silicon Transistor
September 2006
KSC1008
NPN Epitacial Silicon Transistor
Features
鈥?Low frequency amplifier medium speed switching.
鈥?High Collector-Base Voltage : V
CBO
=80V.
鈥?Collector Current : I
C
=700mA
鈥?Collector Power Dissipation : P
C
=800mW
鈥?Suffix 鈥?C鈥?means Center Collector (1.Emitter 2.Collector 3.Base)
鈥?Non suffix 鈥?C鈥?means Side Collector (1.Emitter 2.Base 3.Collector)
鈥?Complement to KSA708
KSC1008
1 2 3
tm
TO-92
: 1. Emitter 2. Base
3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings *
T
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature
a
= 25擄C unless otherwise noted
Parameter
Value
80
60
8
700
800
+150
-55 ~ +150
Units
V
V
V
mA
mW
擄C
擄C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics *
T
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
a
= 25擄C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
80
60
8
Typ.
Max.
Units
V
V
V
0.1
0.1
40
0.2
0.86
30
50
8
400
0.4
1.1
碌A(chǔ)
碌A(chǔ)
V
V
MHz
pF
* DC Item are tested by Pulse Test: Pulse Width鈮?00us, Duty Cycle鈮?%
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSC1008 Rev. B

KSC1008COBU 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 700mA

  • 60V

  • 400mV @ 50mA，500mA

  • -

  • 70 @ 50mA，2V

  • 800mW

  • 50MHz

  • 通孔

  • TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體

  • TO-92-3

  • 散裝

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