KSB744/744A
KSB744/744A
Audio Frequency Power Amplifier
鈥?Complement to KSD794/KSD794A
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
TJ
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
: KSB744
: KSB744A
Parameter
Value
-70
-45
-60
-5
-3
-5
-0.6
1
10
150
-55 ~ 150
Units
V
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= -45V, I
E
= 0
V
EB
= -3V, I
C
= 0
V
CE
= -5V, I
C
= -20mA
V
CE
= -5V, I
C
= -0.5A
I
C
= -1.5A, I
C
= -0.15A
I
C
= -1.5A, I
B
= -0.15A
V
CE
= -5V, I
C
= -0.1A
V
CB
= -10V, I
E
= 0
f = 1MHz
30
60
120
100
-0.5
-0.8
45
60
Min.
Typ.
Max.
-1
-1
320
-2
-2
V
V
MHz
pF
Units
碌A
碌A
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Cassification
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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