KSB1149
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
鈥?High DC Current Gain
鈥?High Power Dissipation : P
C
=1.3W (T
a
=25擄C)
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-8
-3
-5
1.3
15
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 1.5A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 1.5A, I
B
= - 1.5mA
I
C
= - 1.5A, I
B
= - 1.5mA
V
CC
= - 40V, I
C
= - 1.5A
I
B1
= - I
B2
= - 1.5mA
R
L
= 27鈩?/div>
2000
1000
- 0.9
- 1.5
0.5
2
1
Min.
Typ.
Max.
- 10
-2
20000
- 1.2
-2
V
V
碌s
碌s
碌s
Units
碌A(chǔ)
mA
* Pulse test: PW鈮?50碌s, duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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