KSB1098
KSB1098
Low Frequency Power Amplifier
鈥?Low Speed Switchng Industrial Use
鈥?Complement to KSD1589
1
TO-220F
2.Collector
3.Emitter
1.Base
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 100
- 100
-7
-5
-8
- 0.5
2
20
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?00碌s, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 3A
V
CE
= - 2V, I
C
= - 5A
I
C
= - 3A, I
B
= - 3mA
I
C
= - 3A, I
B
= - 3mA
V
CC
= - 50V, I
C
= - 3A
I
B1
= - I
B2
= - 3mA
R
L
= 17鈩?/div>
0.5
1
1
2000
500
Min.
Typ.
Max.
-1
-3
15K
- 1.5
-2
V
V
碌s
碌s
碌s
Units
碌A
mA
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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