KSA940
KSA940
Vertical Deflection Output Power Amplifier
鈥?Complement to KSC2073
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 150
- 150
-5
- 1.5
- 0.5
1.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= - 120V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 10V, I
C
= - 500mA
I
C
= - 500mA, I
B
= - 50mA
V
CE
= - 10V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 500mA
V
CB
= - 10V, I
E
= 0
f = 1MHz
- 0.65
- 0.75
4
55
40
75
Min.
Typ.
Max.
- 10
- 10
140
- 1.5
- 0.85
V
V
MHz
pF
Units
碌A(chǔ)
碌A(chǔ)
漏2000 Fairchild Semiconductor International
Rev. A, February 2000