KSA910
KSA910
Driver Stage Of Audio Amplifier & High
Voltage Switching Applications
鈥?Collector-Emitter Voltage : V
CEO
= -150V
鈥?Output Capacitance : C
ob
=5pF (MAX.)
鈥?Complement to KSC2310
1
TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-150
-150
-5
-50
800
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -5mA, I
B
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -150V, I
E
=0
V
CE
= -5V, I
C
= -10mA
I
C
= -10mA, I
B
= -1mA
V
CE
= -30V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
100
5
40
Min.
-150
-150
-5
-100
240
-0.8
V
MHz
pF
Typ.
Max.
Units
V
V
V
nA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001