鈥?/div>
Collector-Base Voltage : V
CBO
= -160V
Collector Power Dissipation : P
C
=800mW
Complement to KSC1009
Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-160
-150
-8
-700
800
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100碌A(chǔ), I
C
=0
V
CB
= -100V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -50mA
I
C
= -200mA, I
B
= -20mA
I
C
= -200mA, I
B
= -20mA
V
CE
= -10V, I
C
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
70
-0.3
-0.9
50
10
Min.
-160
-150
-8
-0.1
-0.1
400
-0.4
-1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
* Pulse Test: PW鈮?50碌s, Duty cycle鈮?%
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
漏2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
1
2
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