KSA642
KSA642
Low Frequency Power Amplifier
鈥?Complement to KSD227
鈥?Collector Power Dissipation : P
C
= 400mW
鈥?Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-25
-5
-300
-500
400
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
擄C
擄C
* PW鈮?0ms, Duty cycle鈮?0%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
Test Condition
I
C
= -100碌A, I
E
=0
I
C
= -10mA. I
B
=0
I
E
= -10碌A. I
C
=0
V
CB
= -25V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V, I
C
= -50mA
I
C
= -300mA, I
B
= -30mA
70
-0.35
Min.
-30
-25
-5
-100
-100
400
-0.6
V
Typ.
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW鈮?50碌s, Duty cycle鈮?%
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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