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KSA473

KSA473

Low Frequency Power Amplifier

Power Regulator

鈥?Collector Current : I

C

= -3A

鈥?Collector Dissipation : P

C

= 10W (T

C

=25擄C)

鈥?Complement to KSC1173

1

TO-220

2.Collector

3.Emitter

1.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Ratings

- 30

- 30

-5

-3

10

150

- 55 ~ 150

Units

V

V

V

A

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

V

CE

(sat)

V

BE

(on)

f

T

C

ob

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

Test Condition

I

C

= - 500碌A(chǔ), I

E

= 0

I

C

= - 10mA, I

B

= 0

I

E

= - 1mA, I

C

= 0

V

CB

= - 20V, I

E

= 0

V

EB

= - 5V, I

C

= 0

V

CE

= - 2V, I

C

= - 0.5A

V

CE

= - 2V, I

C

= - 2.5A

I

C

= - 2A, I

B

= - 0.2A

V

CE

= - 2V, I

C

= - 0.5A

V

CE

= - 2V, I

C

= - 0.5A

V

CB

= - 10V, I

E

= 0,

f = 1MHz

70

25

- 0.3

- 0.75

100

40

Min.

- 30

- 30

-5

- 1.0

- 1.0

240

- 0.8

- 1.0

V

V

MHz

pF

Typ.

Max.

Units

V

V

V

碌A(chǔ)

碌A(chǔ)

h

FE

Classification

Classification

h

FE1

O

70 ~ 140

Y

120 ~ 240

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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