鈥?/div>
Audio Power Amplifier
High Current Capability : I
C
= - 6A
High Power Dissipation
Wide S.O.A
Complement to KSC4010
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T =25擄C unless otherwise noted
a
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-6
-12
60
150
- 50 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T =25擄C unless otherwise noted
a
Symbol
R
胃JC
* Device mounted on the minimum pad size.
Parameter
Thermal Resistance, Junction to Case
Value
2.0
Units
擄C/W
Electrical Characteristics*
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
T
a
= 25擄C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Conditions
I
C
= -5A, I
B
= 0
V
CB
= -120V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -5V, I
C
= -1A,
I
C
= -5A, I
B
= -0.5A
V
CE
= -5V, I
C
= -5A
V
CE
= -5V, I
C
= -1A
V
CB
=-10V, I
E
=0, f=1MHz
Min.
-120
-
-
55
-
-
-
-
Typ.
-
-
-
-
-
-
30
180
Max.
-
-10
-10
160
-2.5
-1.5
-
-
Units
V
碌A(chǔ)
碌A(chǔ)
V
V
MHz
pF
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
h
FE
Classification
Classification
h
FE
R
55 ~ 110
O
80 ~ 160
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSA3010 Rev. C
1
2
3
4
5
