鈥?/div>
High Current Capability : I
C
= 15A
High Collector-Emitter Breakdown Voltage : BV
CEO
=230V (Min.)
High Power Dissipation
Wide S.O.A
Complement to KSC5242
1
TO-3P
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Ratings
-230
-230
-5
-10
-1.5
100
150
- 50 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=-5mA, I
E
=0
I
C
=-10mA, R
BE
=鈭?/div>
I
E
=-5mA, I
C
=0
V
CB
=-230V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-7A
I
C
=-8A, I
B
=-0.8A
V
CE
=-5V, I
C
=-7A
V
CE
=-5V, I
C
=-1A
V
CB
=-10V, f=1MHz
55
35
60
-0.4
-1.0
30
360
-3.0
-1.5
V
V
MHz
pF
Min.
-230
-230
-5
-5.0
-5.0
160
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
* Pulse Test : PW=20us
* h
FE
Classification
Classification
h
FE1
R
55 ~ 110
O
80 ~ 160
漏2000 Fairchild Semiconductor International
Rev. B, November 2000
next