鈥?/div>
High Voltage : V
CEO
= -300V
Low Reverse Transfer Capacitance : C
re
= 2.3pF at V
CB
= -30V
Excellent Gain Linearity for low THD
High Frequency: 150MHz
Full thermal and electrical Spice models are available
Complement to 2SC3503/KSC3503
1
TO-126
2.Collector
3.Base
1. Emitter
Absolute Maximum Ratings*
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
CP
P
C
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
T
a
= 25擄C unless otherwise noted
Parameter
Ratings
-300
-300
-5
-100
-200
7
1.2
- 55 ~ +150
Units
V
V
V
mA
mA
W
W
擄C
Total Device Dissipation, T
C
=25擄C
T
C
=125擄C
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
R
胃JC
* Device mounted on minimum pad size
T
a
=25擄C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
17.8
Units
擄C/W
h
FE
Classification
Classification
h
FE
C
40 ~ 80
D
60 ~ 120
E
100 ~ 200
F
160 ~ 320
漏 2008 Fairchild Semiconductor Corporation
2SA1381/KSA1381 Rev. A1
1
www.fairchildsemi.com