KSA1370
KSA1370
Crt Display, Video Output
鈥?High Voltage
鈥?Low Reverse Transfer Capacitance : C
re
= 1.7pF
1
TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Trnsistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-200
-200
-5
-100
-200
1.0
150
-55 ~ 150
Units
V
V
V
mA
mA
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= -10碌A(chǔ), I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -150V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -10mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -30V, I
C
= -10mA
V
CB
= -30V, f=1MHz
V
CB
= -30V, f=1MHz
150
2.6
1.7
100
Min.
-200
-200
-5
-0.1
-0.1
320
-0.6
-1.0
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
漏2002 Fairchild Semiconductor Corporation
Rev. C, December 2002