KSA1298
KSA1298
Low Frequency Power Amplifier
鈥?Complement to KSC3265
2
1
3
SOT-23
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Base 2. Emitter 3. Collector
Ratings
-30
-25
-5
-800
-160
200
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
擄C
擄C
鈥?/div>
Refer to KSA643 for graphs.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -500mA, I
B
= -20mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, I
E
= 0, f=1MHz
-0.5
120
13
100
40
Min.
-25
-5
-100
-100
320
-0.4
-0.8
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
h
FE1
Classification
Classification
h
FE1
Marking
O
100 ~ 200
Y
160 ~ 320
J1 O
h
FE
grade
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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2
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