KSA1281
KSA1281
Audio Power Amplifier
鈥?Collector Power Dissipation : P
C
=1W
鈥?3 Watt Output Application
1
TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-50
-50
-5
-2
1
150
-55 ~ +150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(sat)
V
CE
(sat)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Test Condition
I
C
= -100, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1.5A
I
C
= -1A, I
B
= -0.05mA
I
C
= -1A, I
B
= -0.05mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -2V, I
C
= -500mA
40
100
70
40
Min.
-50
-50
-5
-100
-100
240
-1.2
-0.5
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
h
FE1
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001