KSA1220/1220A
KSA1220/1220A
Audio Frequency Power Amplifier
High Frequency Power Amplifier
鈥?Complement to KSC2690/KSC2690A
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
T
C
=25擄C unless otherwise noted
Parameter
: KSA1220
: KSA1220A
: KSA1220
: KSA1220A
Ratings
- 120
- 160
- 120
- 160
-5
- 1.2
- 2.5
- 0.3
1.2
20
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= - 120V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 5V, I
C
= - 5mA
V
CE
= - 5V, I
C
= - 0.3A
I
C
= - 1A, I
B
= - 0.2A
I
C
= - 1A, I
B
= - 0.2A
V
CE
= - 5V, I
C
= - 0.2A
V
CB
= - 10, I
E
= 0
f = 1MHz
35
60
150
140
- 0.4
-1
175
26
Min.
Typ.
Max.
-1
-1
320
- 0.7
- 1.3
V
V
MHz
pF
Units
碌A(chǔ)
碌A(chǔ)
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001