KSA1203 PNP Epitaxial Silicon Transistor
July 2005
KSA1203
PNP Epitaxial Silicon Transistor
Low Frequency Power Amplifier
鈥?3W Output application
鈥?Collector Power Dissipation P
C
=1~2W : Mounted on Ceramic Board
鈥?Complement to KSC2883
Marking
1 2
P Y
1
0 3
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
T
a
= 25擄C unless otherwise noted
Parameter
Ratings
-30
-30
-5
-1.5
-0.3
500
1,000
150
-55 ~ 150
Units
V
V
V
A
A
mW
mW
擄C
擄C
Collector Power Dissipation
Junction Temperature
Storage Temperature
* Mounted on Ceramic Board (250mm
2
脳
0.8mm)
Electrical Characteristics
T
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
a
=
25擄C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
= 0
I
E
= -1mA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
BE
= -5V, I
C
= 0
V
CE
= -2V, I
C
= -500mA
I
C
= -1.5A, I
B
= -30mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -500mA
V
CB
= -10V, I
E
= 0, f = 1MHz
Min.
-30
-5
Typ.
Max.
Units
V
V
-100
-100
100
320
-2.0
-1.0
120
50
nA
nA
V
V
MHz
pF
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSA1203 Rev. B3
1
2
3
4
5
