KSA1175
KSA1175
Low Frequency Amplifier
鈥?Collector-Base Voltage : V
CBO
= -60V
鈥?Complement to KSC2785
1
TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-60
-50
-5
-150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
E
= -1mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -0.3mA
f=100Hz, R
S
=10K鈩?/div>
-0.50
50
40
-0.18
-0.62
180
2.8
6.0
20
Min.
-60
-50
-5
-0.1
-0.1
700
-0.3
-0.80
V
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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