KSA1015
KSA1015
LOW FREQUENCY AMPLIFIER
鈥?Collector-Base Voltage : V
CBO
= -50V
鈥?Complement to KSC1815
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
ST9
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-50
-50
-5
-150
-50
400
125
-65 ~ 150
Units
V
V
V
mA
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -2mA
V
CE
= -6V, I
C
= -150mA
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
=-1mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -0.1mA
f=100Hz, R
G
=10k鈩?/div>
80
4
0.5
7
6
70
25
-0.1
Min.
-50
-50
-5
-0.1
-0.1
400
-0.3
-1.1
V
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
GR
200 ~ 400
漏2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
1
2
3
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