PDF預覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10
• 11
• 12
• 13
• 14
• 15
• 16
• 17
• 18
• 19

DRAM MODULE

KMM53632004BK/BKG

KMM53632004BK/BKG EDO Mode

32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V

GENERAL DESCRIPTION

The Samsung KMM53632004B is a 32Mx36bits Dynamic

RAM high density memory module. The Samsung

KMM53632004B consists of sixteen CMOS 16Mx4bits and

eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on

a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling

capacitor is mounted on the printed circuit board for each

DRAM. The KMM53632004B is a Single In-line Memory Mod-

ule with edge connections and is intended for mounting into

72 pin edge connector sockets.

FEATURES

鈥?Part Identification

- KMM53632004BK(4K cycles/64ms Ref, SOJ, Solder)

- KMM53632004BKG(4K cycles/64ms Ref, SOJ, Gold)

鈥?Extended Out Data Mode Operation

鈥?CAS-before-RAS & Hidden Refresh capability

鈥?RAS-only refresh capability

鈥?TTL compatible inputs and outputs

鈥?Single +5V鹵10% power supply

鈥?JEDEC standard PDpin & pinout

鈥?PCB : Height(1420mil), double sided component

PERFORMANCE RANGE

Speed

-5

-6

t

RAC

50ns

60ns

t

CAC

13ns

15ns

t

RC

84ns

104ns

t

HPC

20ns

25ns

PIN CONFIGURATIONS

Pin

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

Symbol

V

SS

DQ0

DQ18

DQ1

DQ19

DQ2

DQ20

DQ3

DQ21

Vcc

NC

A0

A1

A2

A3

A4

A5

A6

A10

DQ4

DQ22

DQ5

DQ23

DQ6

DQ24

DQ7

DQ25

A7

A11

Vcc

A8

A9

RAS3

RAS2

DQ26

DQ8

Pin

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

Symbol

DQ17

DQ35

Vss

CAS0

CAS2

CAS3

CAS1

RAS0

RAS1

NC

W

NC

DQ9

DQ27

DQ10

DQ28

DQ11

DQ29

DQ12

DQ30

DQ13

DQ31

Vcc

DQ32

DQ14

DQ33

DQ15

DQ34

DQ16

NC

PD1

PD2

PD3

PD4

NC

Vss

PIN NAMES

Pin Name

A0 - A11

DQ0 - 35

W

RAS0 - RAS3

CAS0 - CAS3

PD1 -PD4

Vcc

Vss

NC

Function

Address Inputs

Data In/Out

Read/Write Enable

Row Address Strobe

Column Address Strobe

Presence Detect

Power(+5V)

Ground

No Connection

PRESENCE DETECT PINS (Optional)

Pin

PD1

PD2

PD3

PD4

50NS

NC

Vss

Vss

Vss

60NS

NC

Vss

NC

NC

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to

change products and specifications without notice.

next

KMM53632004BKG相關型號PDF文件下載

• 型號
  版本
  描述
  廠商
  下載
• KMM594000
  英文版
  4M x 9 CMOS DRAM Memory Module
  
  KMM594000
• KMM594000
  英文版
  4M x 9 CMOS DRAM Memory Module
  SAMSUNG [S...
  KMM594000
• KMM594000A
  英文版
  4M x 9 CMOS SIMM Memory Module
  
  KMM594000A
• KMM594000A
  英文版
  4M x 9 CMOS SIMM Memory Module
  SAMSUNG [S...
  KMM594000A
• KMM594000B
  英文版
  4M x 9 CMOS DRAM SIMM Memory Module
  
  KMM594000B
• KMM594000B
  英文版
  4M x 9 CMOS DRAM SIMM Memory Module
  SAMSUNG [S...
  KMM594000B
• KMM594000-...
  英文版
  4M x 9 CMOS DRAM Memory Module
  
  KMM594000-8
• KMM594000-...
  英文版
  4M x 9 CMOS DRAM Memory Module
  SAMSUNG [S...
  KMM594000-8
• KMM5324000...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  
  KMM5324000CK
• KMM5324000...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  SAMSUNG [S...
  KMM5324000CK
• KMM5324004...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  
  KMM5324004CK
• KMM5324004...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  SAMSUNG [S...
  KMM5324004CK
• KMM5324100...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  
  KMM5324100CK
• KMM5324100...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  SAMSUNG [S...
  KMM5324100CK
• KMM5324104...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  
  KMM5324104CK
• KMM5324104...
  英文版
  4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  SAMSUNG [S...
  KMM5324104CK
• KMM5328000...
  英文版
  8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  
  KMM5328000CK
• KMM5328000...
  英文版
  8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  SAMSUNG [S...
  KMM5328000CK
• KMM5328100...
  英文版
  8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  
  KMM5328100CK
• KMM5328100...
  英文版
  8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
  SAMSUNG [S...
  KMM5328100CK

您可能感興趣的PDF文件資料

• KMM53216000CK
• KMM53216000BKG
• KMM53216000BKG
• KMM53216000BK
• KMM53216000BK
• KMM5321204C2WG
• KMM5321204C2WG
• KMM5321204C2W
• KMM5321204C2W
• KMM5321200C2WG
• KMM5321200C2WG
• KMM5321200C2W

熱門IC型號推薦

• KA2206B
• KIA78L05
• K9F4008WOA-TCBO
• K9F1G08U0D-SCB0
• K9F2G08U0C-SCB0
• KSP94
• KA7815ETU
• K4M28323LH-HN75
• KA78M05RTM
• K4T1G164QE-HCE6
• K4S561633F-ZL75
• KA324DTF