PRELIMINARY
KM681001B
Document Title
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
CMOS SRAM
Revision History
Rev . No.
Rev. 0.0
Rev. 1.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
1. Delete Preliminary.
2. Delete 17ns, L-version and Industrial Temperature Part.
3. Delete Voh1=3.95V.
4. Delete Data Retention Characteristics and Wave form.
5. Relex operating current
Speed
Previous
Now
15ns
130mA
125mA
17ns
120mA
-
20ns
110mA
123mA
Draft Data
Feb. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Rev. 2.0
Feb. 6th. 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev 2.0
February 1998
-1-