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K9K1G08U0M-YCB0 Datasheet

  • K9K1G08U0M-YCB0

  • 128M x 8 Bit NAND Flash Memory

  • 37頁

  • SAMSUNG   SAMSUNG

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K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
0.2
FLASH MEMORY
History
1. Initial issue
1.[Page 31] device code (76h) --> device code (79h)
1.Powerup sequence is added
: Recovery time of minimum 1碌s is required before internal circuit gets
ready for any command sequences
Draft Date
Apr. 7th 2001
Jul. 3rd 2001
Remark
Jul. 23th 2001
2.5V
V
CC
High
鈮?/div>
2.5V
W
P
W
E
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. [Page28] Only address A
14
to A
25
is valid while A
9
to A
13
is ignored
--> Only address A
14
to A
26
is valid while A
9
to A
13
is ignored
0.3
(page 30)
A14 and A15 must be the same between source and target page
--> A14 , A15 and A26 must be the same between source and target page
Sep. 13th 2001
Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥檚 Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
鈮?/div>
1碌
鈮?/div>
1

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