2. Changed Nop : 10 cycles(Max.)
鈫?/div>
Main Array 2 cycles(Max.)
Spare Array 3 cycles(Max.)
t
3. Added CE don鈥?care mode during the data-loading and reading
1. Revised real-time map-out algorithm(refer to technical notes)
1. Changed device name
- KM29U128T -> K9F2808U0M-YCB0
- KM29U128IT -> K9F2808U0M-YIB0
1. Changed SE pin description
- SE is recommended to coupled to GND or Vcc and should not be
toggled during reading or programming.
Draft Date
April 10th 1998
July 14th 1998
Remark
Preliminary
Final
1.1
April 10th 1999
Final
1.2
1.3
June 30th 1999
Sep. 15th 1999
Final
Final
1.4
July 17th 2000
Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung鈥?Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1