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K6T4016V3C, K6T4016U3C Family

Document Title

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

CMOS SRAM

Revision History

Revision No

0.0

0.1

History

Initial draft

Revise

- Speed bin change

Commercial: 70/85ns to 70/85/100ns

Industrial: 85/100ns to 70/85/100ns

- DC Characteristics change

I

CC

: 5mA at read/write to 4mA at read

I

CC1

: 5mA to 6mA

I

CC2

: 50mA to 45mA

I

SB

: 0.5mA to 0.3mA

I

SB1

: 10碌A to 15碌A for commercial parts

Errata correction

Finalize

Revise

- Add K6T4016V3C-TB55 product

Revise

- Improved V

OH

(output high voltage) from 2.2V to 2.4V.

Draft Date

January 13, 1998

June 12, 1998

Remark

Advance

Preliminary

0.11

1.0

2.0

August 13, 1998

November 16, 1998

June 26, 2001

Final

Final

2.01

October 15, 2001

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1

Revision 2.01

October 2001

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