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K6R4004V1D

Document Title

1Mx4 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY

CMOS SRAM

Revision History

Rev No.

Rev. 0.0

Rev. 0.1

Rev. 1.0

History

Initial release with Preliminary.

Add Low Ver.

Change Icc, Isb and Isb1

Item

I

CC(Commercial)

8ns

10ns

12ns

15ns

8ns

10ns

12ns

15ns

I

SB

I

SB1(L-ver.)

Rev. 0.3

Previous

110mA

90mA

80mA

70mA

130mA

115mA

100mA

85mA

30mA

0.5mA

Current

80mA

65mA

55mA

45mA

100mA

85mA

75mA

65mA

20mA

1.2mA

Nov.23. 2001

Preliminary

Draft Data

Aug. 20. 2001

Sep. 19. 2001

Nov. 3. 2001

Remark

Preliminary

Preliminary

Preliminary

I

CC(Industrial)

1. Correct AC parameters : Read & Write Cycle mA

2. Delete Low Ver.

3. Delete Data Retention Characteristics

Rev. 1.0

1. Delete 12ns,15ns speed bin.

2. Change Icc for Industrial mode.

Item

8ns

I

CC(Industrial)

10ns

1. Add the Lead Free Package type.

Dec.18. 2001

Previous

100mA

85mA

Current

90mA

75mA

July. 26, 2004

Final

Rev. 2.0

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Rev 2.0

July 2004

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