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K6R4004C1C-C Datasheet

  • K6R4004C1C-C

  • 1Mx4 Bit High Speed Static RAM(5V Operating).

  • 8頁

  • SAMSUNG   SAMSUNG

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K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E
Document Title
1Mx4 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
PRELIMINARY
CMOS SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 1.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics
1.3 Changed I
SB1
to 20mA
2.1 Relax D.C parameters.
Item
I
CC
12ns
15ns
20ns
Previous
160mA
155mA
150mA
Current
190mA
185mA
180mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Rev. 2.0
Aug. 19. 1999
Preliminary
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
I
CC
-
190mA
185mA
180mA
Previous
I
sb
70mA
I
sb1
20mA
I
CC
160mA
150mA
140mA
130mA
Current
I
sb
60mA
I
sb1
10mA
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
Mar. 27. 2000
Final
10ns
12ns
15ns
20ns
3.3 Added Extended temperature range
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 3.0
March 2000

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