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K6R1008V1B-I12 Datasheet

  • K6R1008V1B-I12

  • 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolution...

  • 9頁

  • SAMSUNG   SAMSUNG

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K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
Document Title
Preliminary
PRELIMINARY
CMOS SRAM
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
Rev. 0.0
Rev.1.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 32-SOJ-300 package.
2.3. Add Capacitive load of the test environment in A.C test load.
2.4. Change D.C characteristics.
Previous spec.
Changed spec.
Items
(8/10/12ns part)
(8/10/12ns part)
I
CC
160/150/140mA
160/155/150mA
I
SB
30mA
50mA
Change Standby and Data Retention Current for L-ver.
Items
Previous spec.
Changed spec.
I
SB1
0.5mA
0.7mA
I
DR
at 3.0V
0.4mA
0.5mA
I
DR
at 2.0V
0.3mA
0.4mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Rev.2.0
Feb. 25th, 1998
Final
Rev. 2.1
Aug. 4th, 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.1
August 1998

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