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K6E1004C1B-C20 Datasheet

  • K6E1004C1B-C20

  • 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Ev...

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  • SAMSUNG   SAMSUNG

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PRELIMINARY
K6E1004C1B-C/B-L
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out.
CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
Rev.1.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 17ns, L-version and Industrial Temperature Part.
2.3. Delete V
OH1
=3.95V.
2.4. Delete Data Retention Characteristics and Wave form.
2.5. Relex operating current.
Speed
Previous
Now
15ns
120mA
120mA
17ns
110mA
-
20ns
100mA
118mA
3.1. Add Low power Version.
3.2. Add Data Retention chcracteristics.
Draft Data
Feb. 1st 1997
Jun. 1st 1997
Remark
Design Target
Preliminary
Rev. 2.0
Feb. 6th 1998
Final
Rev.3.0
Jul. 28th 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 1998

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