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K6E0808C1C-12 Datasheet

  • K6E0808C1C-12

  • 32Kx8 Bit High Speed CMOS Static RAM

  • 8頁(yè)

  • SAMSUNG   SAMSUNG

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PRELIMINARY
K6E0808C1C-C
Document Title
32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
CMOS SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 1.0
History
Initial release with Preliminary.
Release to final Data Sheet.
1. Delete Preliminary
Update A.C parameters
2.1. Updated A.C parameters
Previous spec.
Updated spec.
(12/15/20ns part)
(12/15/20ns part)
t
OE
- / 8/10ns
- / 7 /9 ns
t
CW
- /12/ - ns
- /11/ - ns
t
HZ
8/10/10ns
6/ 7/10ns
t
OHZ
- / 8 / - ns
- / 7 / - ns
t
DW
- / 9 / - ns
- / 8 / - ns
2.2. Add V
OH1
=3.95V with the test condition as Vcc=5V鹵5% at 25擄C
Items
Rev. 3.0
3.1. Add 28-TSOP1 Package.
3.2. Add L-version.
3.3. Add Data Rentention Characteristics.
4.1. Delete DIP Package.
4.2. Delete L-version.
4.3. Delete Data Retention Characteristics and Waveform.
Feb. 22th, 1996
Final
Draft Data
Apr. 1st, 1994
May 14th,1994
Remark
Preliminary
Final
Rev. 2.0
Oct. 4th, 1994
Final
Rev. 4.0
Feb. 25th, 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
February 1998

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