JANTX2N7227 Datasheet

IC型號：
JANTX2N7227
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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) |...
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上傳產(chǎn)品規(guī)格書

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The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 21 September 1996

IINCH-POUND

MIL-PRF-19500/592C

21 June 1996

SUPERSEDING

MIL-S-19500/592B

31 January 1991

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U,

2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC

This specification supersedes DESC drawing 89026 (see 6.3.1).

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power

transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each

encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die,

with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).

1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for surface mount devices, and figure 3 for JANHC and JANKC (die)

dimensions.

1.3 Maximum ratings (TA = +25

(

C, unless otherwise specified).

Type 1/

PT 2/

= +25

(

PT 2/

= +25

(

4.0

VGS

ID1 3/

= +25

(

ID2 3/

= +100

(

A dc

IDM

Top

and

TSTG

VISO

70,000

foot

R JC

max

V dc

A dc

34.0

27.4

14.0

12.0

A dc

34.0

27.4

14.0

12.0

A(pk)

136

110

-55

+150

C/W

0.83

2N7224

2N7225

2N7226

2N7227

150

400

500

See footnotes on next page.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH

45444-5765, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC/NA

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

現(xiàn)有數(shù)量
0現(xiàn)貨
價(jià)格
停產(chǎn)
系列
Military, MIL-PRF-19500/592
包裝
散裝
產(chǎn)品狀態(tài)
停產(chǎn)
FET 類型
N 通道
技術(shù)
MOSFET（金屬氧化物）
漏源電壓（Vdss）
400 V
25°C 時(shí)電流 - 連續(xù)漏極 (Id)
14A（Tc）
驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）
10V
不同 Id、Vgs 時(shí)導(dǎo)通電阻（最大值）
415 毫歐 @ 14A，10V
不同 Id 時(shí) Vgs(th)（最大值）
4V @ 250μA
不同 Vgs 時(shí)柵極電荷?(Qg)（最大值）
110 nC @ 10 V
Vgs（最大值）
±20V
不同 Vds 時(shí)輸入電容 (Ciss)（最大值）
-
FET 功能
-
功率耗散（最大值）
4W（Ta），150W（Tc）
工作溫度
-55°C ~ 150°C（TJ）
安裝類型
通孔
供應(yīng)商器件封裝
TO-254AA
封裝/外殼
TO-254-3，TO-254AA（直引線）

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JANTX2N7227 Datasheet

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