JANTX2N5682 Datasheet

IC型號：
JANTX2N5682
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TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-5
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The documentation process conversion measures

necessary to comply with this revision shall be

completed by 21 November 1999.

INCH-POUND

MIL-PRF-19500/583A

21 August 1999

SUPERSEDING

MIL-S-19500/583

23 April 1990

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,

TYPES 2N5681 AND 2N5682 JAN, JANTX AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN , silicon, amplifier transistor. Three levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1, (TO-39).

1.3 Maximum ratings. Unless otherwise specified, TA = +25

擄

Type

PT 1/

VCBO

VCEO

VEBO

Top and TSTG

TA = +25

擄

C TC = +25

擄

2N5681

2N5682

1.0

V dc

100

120

V dc

100

120

V dc

4.0

A dc

1.0

A dc

0.5

擄

-65 to +200

1/ Derate linearly 5.7 mW/

擄

C for TA > +25

擄

1/ Derate linearly 57 mW/

擄

C for TC > +25

擄

1.4 Primary electrical characteristics at T

= +25

擄

Limits

at VCE = 2.0 V dc 1/

FE1

FE2

= 250 mA dc I

= 500 mA dc

FE3

= 1.0 A dc

胃

max

VBE(sat)1 1/

VCE(sat)1 1/

obo

f = 1.0 MHz IC = 250 mA dc IC = 250 mA dc

VCE = 10 V dc VCB = 20 V dc IB = 25 mA dc IB = 25 mA dc

IC = 100 mA dc

IE = 0

f = 10 MHz

3.0

0.6

1.1

V dc

Min

Max

150

擄

17.5

1 Pulsed see 4.5.1.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

現(xiàn)有數(shù)量
382現(xiàn)貨
價格
1 : ￥370.78000散裝
系列
Military, MIL-PRF-19500/583
包裝
散裝
產(chǎn)品狀態(tài)
在售
晶體管類型
NPN
電流 - 集電極 (Ic)（最大值）
1 A
電壓 - 集射極擊穿（最大值）
120 V
不同?Ib、Ic 時?Vce 飽和壓降（最大值）
1V @ 50mA，500mA
電流 - 集電極截止（最大值）
10μA
不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）
40 @ 250mA，2V
功率 - 最大值
1 W
頻率 - 躍遷
-
工作溫度
-65°C ~ 200°C（TJ）
安裝類型
通孔
封裝/外殼
TO-205AD，TO-39-3 金屬罐
供應商器件封裝
TO-39

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