The documentation process conversion measures
necessary to comply with this revision shall be
completed by 21 November 1999.
INCH-POUND
MIL-PRF-19500/582A
21 August 1999
SUPERSEDING
MIL-S-19500/582
3 May 1990
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER,
TYPES 2N5679 AND 2N5680 JAN, JANTX AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, amplifier transistor. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (TO-39).
1.3 Maximum ratings. Unless otherwise specified, TA = +25
擄
C.
Type
PT 1/
PT
VCBO
VCEO
VEBO
IC
IB
Top and TSTG
TA = +25
擄
C TC = +25
擄
C
1/
2/
W
2N5679
2N5680
1.0
1.0
W
10
10
V dc
100
120
V dc
100
120
V dc
4.0
4.0
A dc
1.0
1.0
A dc
0.5
0.5
擄
C
-65 to +200
1/ Derate linearly 5.7 mW/
擄
C for TA > +25
擄
C;
1/ Derate linearly 57mW/
擄
C for TC > +25
擄
C.
1.4 Primary electrical characteristics at T
A
= +25
擄
C.
Limits
h
FE
at VCE = 2.0 V dc 1/
h
FE1
h
FE2
I
C
= 250 mA dc I
C
= 500 mA dc
h
FE3
I
C
= 1.0 A dc
R
胃
JC
max
VCE(sat)1 1/
VBE(sat)1 1/
IC = 250 mA dc IC = 250 mA dc
VCE = 10 V dc VCB = 20 V dc IB = 25 mA dc IB = 25 mA dc
IC = 100 mA dc
IE = 0
/h
fe
/
f = 10 MHz
C
obo
f = 1.0 MHz
pF
3.0
50
0.6
1.1
V dc
Min
Max
40
150
20
5
擄
C
17.5
1 Pulsed see 4.5.1.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961