The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
MIL-PRF-19500/454D
27 July 2001
SUPERSEDING
MIL-PRF-19500/454C
19 August 1999
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE: 2N5660, 2N5661, 2N5662, AND 2N5663, JAN, JANTX, JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three
level of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. For types 2N5660 and 2N5661, see figure 1 (similar to TO-66).
For types 2N5662 and 2N5663, see figure 2 (similar to TO-5).
1.3 Maximum ratings. T
C
= +25擄C, unless otherwise specified.
Type
PT
TA =
+25擄C
W
2N5660
2N5661
2N5662
2N5663
(1)
(2)
(3)
(4)
2.0
2.0
1.0
1.0
(1)
(1)
(3)
(3)
PT
TC =
+100擄C
W
20
20
15
15
(2)
(2)
(4)
(4)
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
VCER
V dc
250
400
250
400
V dc
200
300
200
300
V dc
6.0
6.0
6.0
6.0
A dc
0.5
0.5
0.5
0.5
A dc
2.0
2.0
2.0
2.0
擄C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
V dc
250
400
250
400
Derate linearly, 11.4 mW/擄C for TA > +25擄C.
Derate linearly, 200 mW/擄C for TC > +100擄C.
Derate linearly, 5.7 mW/擄C for TA > +25擄C.
Derate linearly, 150 mW/擄C for TC > +100擄C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box
3990, Columbus, OH 43216-5000, using the Standardization Document Improvement Proposal (DD Form 1426)
appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961