The document and process conversion measures
necessary to comply with this revision shall be
completed by 30 November 1999
INCH-POUND
MIL-PRF-19500/526D
30 August 1999
SUPERSEDING
MIL-S-19500/526C
20 March 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N3879 JAN, JANTX AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-66).
1.3 Maximum ratings. (T
A
= +25擄C, unless otherwise specified).
P
T
1/
T
C
= +25擄C
V
CBO
V
CEO
V
EBO
I
B
I
C
T
J
and T
STG
R
胃
JC
W
35
V dc
120
V dc
75
V dc
7
A dc
5
A dc
7
擄C/W
-65 to +200
擄C/W
5
1/ Derate linearly 200 mW/擄C for T
C
> +25擄C.
1.4 Primary electrical characteristics.
h
FE1
1/
h
FE2
1/
V
BE(SAT)1
V
CE(SAT)1
C
obo
|h
fe
|
Switching (see table I
and figure 2 herein)
t
on
t
off
V
CE
= 5.0 V dc V
CE
= 5.0 V dc I
C
= 4.0 V dc
I
C
= 0.5 A dc
I
B
= 4.0 A dc
I
B
= 0.4 A dc
V dc
Min
Max
40
20
80
I
C
= 4.0 V dc V
CB
= 10 V dc
I
B
= 0.4 A dc I
E
= 0
0.1 MHz
鈮?/div>
f
鈮?/div>
1 MHz
V dc
pF
V
CE
= 10 V dc
I
C
= 500 mA dc
f = 10 MHz
碌s
4
20
碌s
2.0
1.2
175
0.44
1.2
1/ Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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