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JANSH2N7431U Datasheet

  • JANSH2N7431U

  • 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in ...

  • 8頁(yè)

  • ETC

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PD - 91416B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-2)
Product Summary
Part Number
IRHNA7064
IRHNA3064
IRHNA4064
IRHNA8064
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.015鈩?/div>
0.015鈩?/div>
0.015鈩?/div>
0.015鈩?/div>
I
D
75*A
75*A
75*A
75*A
IRHNA7064
JANSR2N7431U
60V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD Hard HEXFET
TECHNOLOGY
鈩?/div>
廬
QPL Part Number
JANSR2N7431U
JANSF2N7431U
JANSG2N7431U
JANSH2N7431U
SMD-2
International Rectifier鈥檚 RADHard HEXFET
廬
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
*Current is limited by pin diameter
300 ( for 5sec)
3.3 (Typical )
75*
56
300
300
2.4
鹵20
500
75*
30
2.5
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
12/12/01

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