The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 17 March 1998.
INCH-POUND
MIL-PRF-19500/605A
17 December 1997
SUPERSEDING
MIL-S-19500/605
10 November 1992
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY)
TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298
JANTXVM, D, R, H AND JANSM, D AND R
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation
hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance
are provided for each device type specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-254).
1.3 Maximum ratings. T
A
= +25擄C unless otherwise specified.
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Type
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2N7292
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2N7294
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2N7296
|
2N7298
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P
T
1/
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T
C
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= +25擄C
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|
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W
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125
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P
T
|
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T
A
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= +25擄C
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W
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2.5
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|
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|
|
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V
DS
V dc
100
200
250
500
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|
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V
DG
V dc
100
200
250
500
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V
GS
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V dc
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鹵20
|
|
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I
D1
2/
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T
C
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= +25擄C
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A dc
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25.0
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23.0
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17.0
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9.0
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I
D2
|
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T
C
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= 100擄C
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|
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A dc
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20.0
|
15.0
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11.0
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6.0
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I
S
|
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2/
|
|
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A dc
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25.0
|
23.0
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17.0
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9.0
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I
DM
A (pk)
75
69
51
27
|
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T
J
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and
|
T
STG
|
|
|
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擄C
|
|
-55
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to
|
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+150
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|
V
ISO
|
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70,000
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feet
|
altitude
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|
V dc
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|
N/A
|
N/A
|
250
|
500
|
|
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1/ Derate linearly 1.0 W/擄C for T
C
> +25擄C; P
T
=
T
JM
- T
C
R
胃JC
2/
I
D
=
T
J
max
- T
C
( R
螛
JC
)x( R
DS
on
at T
Jmax
)
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Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving
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this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East
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Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal
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(DD Form 1426) appearing at the end of this document or by letter.
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AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961