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JANSR2N7432 Datasheet

  • JANSR2N7432

  • 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in ...

  • 8頁

  • ETC

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PD - 91331C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
Product Summary
Part Number Radiation Level
IRHM7160
100K Rads (Si)
IRHM3160
300K Rads (Si)
IRHM4160
600K Rads (Si)
IRHM8160
1000K Rads (Si)
R
DS(on)
0.045鈩?/div>
0.045鈩?/div>
0.045鈩?/div>
0.045鈩?/div>
REF: MIL-PRF-19500/663
廬
RAD Hard HEXFET
TECHNOLOGY
聶
IRHM7160
JANSR2N7432
100V, N-CHANNEL
I
D
QPL Part Number
35*A JANSR2N7432
35*A JANSF2N7432
35*A JANSG2N7432
35*A JANSH2N7432
TO-254AA
International Rectifier聮s RADHard HEXFET
廬
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
*Current limited by pin diameter
For footnotes refer to the last page
35*
35*
201
250
2.0
鹵20
500
35
25
7.3
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
g
www.irf.com
1
8/14/01

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