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JANSR2N7433U Datasheet

  • JANSR2N7433U

  • 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in ...

  • 8頁(yè)

  • ETC

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PD - 91397B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA7260 100K Rads (Si)
IRHNA3260 300K Rads (Si)
IRHNA4260
600K Rads (Si)
IRHNA8260 1000K Rads (Si)
R
DS(on)
0.07鈩?/div>
0.07鈩?/div>
0.07鈩?/div>
0.07鈩?/div>
I
D
43A
43A
43A
43A
IRHNA7260
200V, N-CHANNEL
REF: MIL-PRF-19500/664
廬
鈩?/div>
RAD-Hard HEXFET
MOSFET TECHNOLOGY
QPL Part Number
JANSR2N7433U
JANSF2N7433U
JANSG2N7433U
JANSH2N7433U
SMD - 2
International Rectifier鈥檚 RADHard HEXFET
廬
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聦
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 ( for 5s)
3.3 (Typical)
43
27
172
300
2.4
鹵20
500
43
30
5.7
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
5/4/2000

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