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IRHNA93160 Datasheet

  • IRHNA93160

  • -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in...

  • 8頁

  • ETC

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PD - 91433C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
鈩?/div>
IRHNA9160
JANSR2N7425U
100V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD Hard HEXFET TECHNOLOGY
廬
Product Summary
Part Number Radiation Level
IRHNA9160
100K Rads (Si)
IRHNA93160 300K Rads (Si)
R
DS(on)
0.068鈩?/div>
0.068鈩?/div>
I
D
-38A
-38A
QPL Part Number
JANSR2N7425U
JANSF2N7425U
International Rectifier鈥檚 RADHard HEXFET
TM
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C
ID @ VGS = -12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
For footnotes refer to the last page
-38
-24
-152
300
2.4
鹵20
500
-38
30
-17
-55 to 150
300 (for 5s)
3.3(typical)
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
02/20/03

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