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JANSR2N7424U Datasheet

  • JANSR2N7424U

  • -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in ...

  • 122.97KB

  • 8頁

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PD - 91447C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA9064
100K Rads (Si)
IRHNA93064 300K Rads (Si)
R
DS(on)
0.045鈩?/div>
0.045鈩?/div>
I
D
-48A
-48A
IRHNA9064
JANSR2N7424U
60V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard HEXFET TECHNOLOGY
鈩?/div>
廬
QPL Part Number
JANSR2N7424U
JANSF2N7424U
International Rectifier鈥檚 RAD-Hard HEXFET
TM
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25擄C
ID @ VGS = -12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
-48
-30
-192
300
2.4
鹵20
500
-48
30
-4.4
-55 to 150
300 (for 5 Sec.)
3.3 (typical)
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
02/18/03

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