JANSR2N7389U Datasheet

IC型號(hào)：
JANSR2N7389U
PDF描述：
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in...
文件大?。?/label>
122.92KB
PDF頁數(shù)：
8頁
芯片廠家：
ETC

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PD - 90881C

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-18)

Product Summary

Part Number Radiation Level

IRHE9130

100K Rads (Si)

IRHE93130

300K Rads (Si)

DS(on)

0.30鈩?/div>

-6.5A

IRHE9130

100V, P-CHANNEL

REF: MIL-PRF-19500/630

廬

鈩?/div>

RAD-Hard HEXFET

MOSFET TECHNOLOGY

QPL Part Number

JANSR2N7389U

JANSF2N7389U

International Rectifier鈥檚 RAD-Hard

HEXFET

廬

MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low Rdson and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

LCC - 18

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

鉃€

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

鉃?/div>

Avalanche Current

鉃€

Repetitive Avalanche Energy

鉃€

Peak Diode Recovery dv/dt

鉃?/div>

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

-6.5

-4.1

-26

0.2

鹵20

165

-6.5

2.5

-22

-55 to 150

300 ( for 5s)

0.42 (Typical)

Pre-Irradiation

Units

W/擄C

V/ns

www.irf.com

2/20/03

現(xiàn)有數(shù)量
0現(xiàn)貨
價(jià)格
停產(chǎn)
系列
Military, MIL-PRF-19500/630
包裝
托盤
產(chǎn)品狀態(tài)
停產(chǎn)
FET 類型
P 通道
技術(shù)
MOSFET（金屬氧化物）
漏源電壓（Vdss）
100 V
25°C 時(shí)電流 - 連續(xù)漏極 (Id)
6.5A（Tc）
驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）
12V
不同 Id、Vgs 時(shí)導(dǎo)通電阻（最大值）
350 毫歐 @ 6.5A，12V
不同 Id 時(shí) Vgs(th)（最大值）
4V @ 1mA
不同 Vgs 時(shí)柵極電荷?(Qg)（最大值）
45 nC @ 12 V
Vgs（最大值）
±20V
不同 Vds 時(shí)輸入電容 (Ciss)（最大值）
-
FET 功能
-
功率耗散（最大值）
25W（Tc）
工作溫度
-55°C ~ 150°C
安裝類型
表面貼裝型
供應(yīng)商器件封裝
18-ULCC（9.14x7.49）
封裝/外殼
18-CLCC

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