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IRHY93230CM Datasheet

  • IRHY93230CM

  • -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in...

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  • ETC

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PD-91401
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level
IRHY9230CM 100K Rads (Si)
IRHY93230CM 300K Rads (Si)
R
DS(on)
0.8鈩?/div>
0.8鈩?/div>
IRHY9230CM
JANSR2N7383
200V, P-CHANNEL
REF: MIL-PRF-19500/615
RAD-Hard HEXFET
TECHNOLOGY
鈩?/div>
廬
I
D
QPL Part Number
-6.5A JANSR2N7383
-6.5A JANSF2N7383
TO-257AA
International Rectifier鈥檚 RAD-Hard
TM
HEXFET
廬
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-6.5
-4.1
-26
75
0.6
鹵20
165
-6.5
7.5
-27
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/05/00

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