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JANSG2N7270 Datasheet

  • JANSG2N7270

  • 500V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in ...

  • 313.01KB

  • 12頁

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PD - 90673A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
廬
TRANSISTOR
500Volt, 0.45鈩? MEGA RAD HARD HEXFET
鈩?/div>
International Rectifier鈥檚 RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical
pre- and post-irradiation test conditions, In-
ternational Rectifier鈥檚 RAD HARD HEXFETs retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier鈥檚 patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
IRHM7450
IRHM8450
JANSR2N7270
JANSH2N7270
N CHANNEL
MEGA RAD HARD
Product Summary
Part Number
IRHM7450
IRHM8450
BV
DSS
500V
500V
R
DS(on)
0.45鈩?/div>
0.45鈩?/div>
I
D
11A
11A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
聛
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聜
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聝
Avalanche Current
聜
Repetitive Avalanche Energy聜
Peak Diode Recovery dv/dt
聞
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
11
7.0
44
150
1.2
鹵20
500
11
15
3.5
-55 to 150
Pre-Irradiation
IRHM7450, IRHM8450
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
g
www.irf.com
1
02/01/99

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